INTRODUCTION
Sharp’s LH28F040SUTD-Z4 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28040SU-Z4 is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• 512K × 8 Bit Configuration
• 5 V Write/Erase Operation (5 V VPP, 3.3 VCC)
    – VCC for Write/Erase at as low as 2.9 V
• Min. 2.7 V Read Capability
    – 190 ns Maximum Access Time (VCC = 2.7 V)
• 2 Banks Enable the Simultaneous Read/Write/Erase Operation
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Interface
    – Status Register
• System Performance Enhancement
    – Erase Suspend for Read
    – Two-Byte Write
    – Bank Erase
• Data Protection
    – Hardware Erase/Write Lockout during Power Transitions
    – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 20 µA (Maximum) ICC in CMOS Standby
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• 40-Pin, 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package