DESCRIPTION
The AMS3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.

FEATURE
● 30V/5.8A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V
● 30V/4.8A, RDS(ON) = 30mΩ @VGS = 4.5V
● 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design