2SC3583 Datasheet(PDF) - Renesas Technology Corp

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2SC3583 Datasheet (PDF) - Renesas Technology Corp

2SC3583 Datasheet PDF - Renesas Technology Corp


Part #	2SC3583

Download	2SC3583 Download

File Size	321.32 Kbytes

Page	10 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC3583 Datasheet (PDF)

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2SC3583 Datasheet PDF - Renesas Technology Corp


Part #	2SC3583

Download	2SC3583 Click to download

File Size	321.32 Kbytes

Page	10 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC3583 Datasheet (HTML) - Renesas Technology Corp

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2SC3583 Product details

DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.

FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz

Similar Part No. - 2SC3583

Manufacturer	Part #	Datasheet	Description
NEC	2SC3583	103Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Guangdong Kexin Industr...	2SC3583	40Kb / 1P	NPN Silicon Epitaxial Transistor
California Eastern Labs	2SC3583	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
Inchange Semiconductor ...	2SC3583	300Kb / 6P	Low Noise and High Gain
Renesas Technology Corp	2SC3583	321Kb / 10P	SILICON TRANSISTOR

Similar Description - 2SC3583

Manufacturer	Part #	Datasheet	Description
NEC	2SC2148	52Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
	2SC3582	99Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4536	60Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	UPA806T	209Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Leshan Radio Company	L2SC3357	309Kb / 2P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC2148	180Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR August 1996

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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