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PF00105A Datasheet (PDF) - Hitachi Semiconductor
PF00105A Datasheet PDF - Hitachi Semiconductor
Part # PF00105A
Download  PF00105A Download
File Size   62.04 Kbytes
Page   11 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description MOS FET Power Amplifier Module for AMPS Handy Phone

PF00105A Datasheet (PDF)

Go To PDF Page Download Datasheet
PF00105A Datasheet PDF - Hitachi Semiconductor

Part # PF00105A
Download  PF00105A Click to download

File Size   62.04 Kbytes
Page   11 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description MOS FET Power Amplifier Module for AMPS Handy Phone

PF00105A Datasheet (HTML) - Hitachi Semiconductor


PF00105A Product details

Features
• Low voltage operation : 4.6 V
• 2 stage amplifier : +8 dBm input
• Lead less small package : 0.2 cc
• High efficiency : 48% Typ at 1 W
• Low power control current : 500 µA Typ




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About Hitachi Semiconductor

Hitachi Semiconductor is a subsidiary of Hitachi, Ltd., a Japanese company that specializes in the design and manufacture of semiconductors.
The company was established in 1970 and is headquartered in Tokyo, Japan.
Hitachi Semiconductor offers a wide range of products including memory products, microcontrollers, power management ICs, and other analog and digital semiconductors.
The company's products are used in various applications such as consumer electronics, automotive systems, and industrial equipment.
Hitachi Semiconductor is known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized semiconductor solutions that meet their specific requirements and needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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