IRFR2405 Datasheet(PDF) - International Rectifier

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IRFR2405 Datasheet (PDF) - International Rectifier

IRFR2405 Datasheet PDF - International Rectifier


Part #	IRFR2405

Download	IRFR2405 Download

File Size	129.36 Kbytes

Page	10 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A??

IRFR2405 Datasheet (PDF)

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IRFR2405 Datasheet PDF - International Rectifier


Part #	IRFR2405

Download	IRFR2405 Click to download

File Size	129.36 Kbytes

Page	10 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A??

IRFR2405 Datasheet (HTML) - International Rectifier

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IRFR2405 Datasheet HTML 9Page - International Rectifier

IRFR2405 Datasheet HTML 10Page - International Rectifier

IRFR2405 Product details

Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Surface Mount (IRFR2405)
● Straight Lead (IRFU2405)
● Advanced Process Technology
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated

Similar Part No. - IRFR2405

Manufacturer	Part #	Datasheet	Description
Kersemi Electronic Co.,...	IRFR2405	1Mb / 8P	Surface Mount (IRFR2405)
Inchange Semiconductor ...	IRFR2405	334Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRFR2405LPBF	226Kb / 11P	Surface Mount (IRFR2405)
International Rectifier	IRFR2405PBF	217Kb / 10P	HEXFET Power MOSFET
Kersemi Electronic Co.,...	IRFR2405PBF	3Mb / 10P	Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology

Similar Description - IRFR2405

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF3205	92Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
	IRF3205S	160Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
	IRF5NJZ48	116Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*)
	IRF9Z34N	108Kb / 8P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
	IRFB260N	90Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
	IRFBA1405P	238Kb / 9P	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A??
	IRFIZ48N	109Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
	IRFP048N	117Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)
	IRFR2605	345Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
	IRFZ24N	123Kb / 8P	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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