V40120C_15 Datasheet(PDF) - Vishay Siliconix

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V40120C Datasheet (PDF) - Vishay Siliconix

V40120C Datasheet PDF - Vishay Siliconix


Part #	V40120C_15

Download	V40120C Download

File Size	158.26 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

V40120C Datasheet (PDF)

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V40120C Datasheet PDF - Vishay Siliconix


Part #	V40120C_15

Download	V40120C Click to download

File Size	158.26 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

V40120C Datasheet (HTML) - Vishay Siliconix

V40120C Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)

Similar Part No. - V40120C_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V40120C	148Kb / 5P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 16-Aug-13

Similar Description - V40120C_15

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V30120S	165Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 19-May-08
	V30200C	158Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	V40100G	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 19-May-08
	V40100PG	106Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A 26-May-08
	V40120C	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 19-May-08
	V50100P	103Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A 26-May-08
	V60200PG	104Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 14-Oct-08
	VB30120S-M3	90Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 14-May-13
	V60DM120C-M3	102Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 22-Apr-15
	V60M120C-M3	129Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 10-May-16

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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