600V N-Channel MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 15 nC (Typ.)
□ BVDSS=600V,ID=4A
□ Lower RDS(on) : 2.5Ω (Max) @VG=10V
□ 100% Avalanche Tested