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PTF211802 Datasheet (PDF) - Infineon Technologies AG

PTF211802 Datasheet PDF - Infineon Technologies AG
Part # PTF211802
Download  PTF211802 Download
File Size   169.14 Kbytes
Page   8 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802 Datasheet (PDF)

Go To PDF Page Download Datasheet
PTF211802 Datasheet PDF - Infineon Technologies AG

Part # PTF211802
Download  PTF211802 Click to download

File Size   169.14 Kbytes
Page   8 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802 Datasheet (HTML) - Infineon Technologies AG


PTF211802 Product details

Features
• Broadband internal matching
• Typical two–carrier WCDMA performance
   - Average output power = 38 W
   - Gain = 15 dB
   - Efficiency = 25%
   - IM3 = –37 dBc
   - ACPR < –42 dBc
• Typical CW performance
   - Output power at P–1dB = 180 W
   - Efficiency = 50%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
   180 W (CW) output power




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About Infineon Technologies AG


Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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