General Description
The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

Features
    n-channel                   p-channel
    VDS (V) = 30V              -30V
    ID = 7.5A                       -6.6A
    RDS(ON)
    < 28mΩ                         < 35mΩ (VGS = 10V)
    < 43mΩ                         < 58mΩ (VGS = 4.5V)
    Schottky
    VDS=30V, IF=3A, VF<0.5V@1A