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EVL6566B-65W-QR Datasheet (PDF) - STMicroelectronics

EVL6566B-65W-QR Datasheet PDF - STMicroelectronics
Part # EVL6566B-65W-QR
Download  EVL6566B-65W-QR Download
File Size   128.98 Kbytes
Page   5 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 19 V - 65 W quasi resonant flyback adapter board

EVL6566B-65W-QR Datasheet (PDF)

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EVL6566B-65W-QR Datasheet PDF - STMicroelectronics

Part # EVL6566B-65W-QR
Download  EVL6566B-65W-QR Click to download

File Size   128.98 Kbytes
Page   5 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 19 V - 65 W quasi resonant flyback adapter board

EVL6566B-65W-QR Datasheet (HTML) - STMicroelectronics


EVL6566B-65W-QR Product details

Description
The EVL6566B-65W-QR is a demonstration board tailored on specification of a typical hi-end portable computer power supply. The peculiarities of this design are the very high average efficiency of about 90% without synchronous rectification and very low no load consumption of 100mW at 230 Vac. The result is that this converter is compliant to energy star eligibility criteria. The flyback stage implements the new ST dedicated current mode controller L6566B, operating in quasi-resonant mode and detecting the transformer demagnetization by pin ZCD. The resistor on pin OSC sets the maximum switching frequency at about 165 kHz. Because the maximum switching frequency is imposed, the converter operates in discontinuous conduction mode during light load operation. The L6566B valley skipping function is capable to turn-on the MOSFET in valley switching even in DCM, thus reducing switching losses. The Power MOSFET is a standard 800 V, STF7NM80, housed in TO-220FP package, needing just a small heat sink. The transformer is layer type, using a standard ferrite size EER28L, designed according to the EN60950. The flyback reflected voltage is ~150 V, providing enough room for the leakage inductance voltage spike with good margin for the reliability of the MOSFET. The output rectifiers are two, dual centre tap Schottky diode in parallel, STPS20H100CFP, housed in TO-220FP. They have been selected according to the maximum reverse voltage, forward voltage drop and power dissipation. The snubber damps the oscillation produced by the diode capacitance and the leakage inductance. A small LC filter has been added on the output, filtering the high frequency ripple and spikes. Thanks to the L6566B valley skipping feature it has been possible to dimension the power transformer parameters optimizing efficiency at different loads achieving an outstanding result even without synchronous rectification.

Features
■ Universal input mains range: 90 264 Vac - frequency 45 ÷ 65Hz
■ Output voltage: 19 V @ 3.42 A continuous operation
■ Mains harmonics: according to EN61000-3-2 Class-D or JEITA-MITI Class-D
■ Stand-by mains consumption: <100 mW @ 230 Vac
■ Average efficiency: better than 89% without synchronous rectification
■ EMI: according to EN55022-Class-B
■ Safety: according to EN60950
■ Dimensions: 58x121 mm, 25 mm components maximum height
■ PCB: single side, 35 µm, CEM-1, mixed PTH/SMT




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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