Description
The LET9070CB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070CB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. M243 epoxy sealed 1 3 2 1. Drain 2. Gate 3. Source

Features
■ Excellent thermal stability
■ Common source configuration
■ POUT (@ 28 V)= 70 W with 17 dB gain @ 945 MHz
■ BeO free package
■ In compliance with the 2002/95/EC European directive
■ Bidirectional ESD