| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
TC58NVG2S3ETA00
|
499Kb / 70P |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
 Hynix Semiconductor |
H27U4G8F2D
|
1,015Kb / 62P |
4 Gbit (512M x 8 bit) NAND Flash
|
 Elite Semiconductor Mem... |
F59D4G81KA
|
1Mb / 50P |
4 Gbit (512M x 8) 1.8V NAND Flash Memory
|
 Toshiba Semiconductor |
TC58DVG3S0ETA00
|
621Kb / 73P |
8 GBIT (1G × 8 BIT) CMOS NAND E2 PROM
2009-03-09C |
|
TC58NVG2S0FBAI4
|
679Kb / 71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NVG2S0FTAI0
|
527Kb / 71P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NVG4S2FTA00
|
608Kb / 72P |
16 GBIT (2G × 8 BIT) CMOS NAND E2 PROM
2009-10-02C |
|
TC58NVG5D2ELA48
|
579Kb / 65P |
32 GBIT (4G × 8 BIT) CMOS NAND E2 PROM (Multi-Level-Cell)
2008-07-18C |
|
TC58NYG2S0FBAI4
|
1Mb / 71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NYG2S3ETA00
|
504Kb / 70P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2010-07-13C |