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TSM2N100CP Datasheet(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TSM2N100CP Datasheet(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
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4 / 6 page ![]() TSM2N100CP Taiwan Semiconductor 4 Version: A1606 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Case VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Continuous Drain Current (A) 10 0 10 -5 10 -4 10 -3 10 -2 10 1 10 -1 10 -3 Square Wave Pulse Duration (s) Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10 -1 10 -2 SINGLE PULSE RӨJC=1.62˚C/W Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC |
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