MMBTA06 datasheet(1/2 Pages) DIOTEC

Part #	MMBTA06

Description	SMD High Voltage NPN Transistors

PDF	2 Pages

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Manufacturer	DIOTEC [Diotec Semiconductor]

Direct Link	http://www.diotec.com

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MMBTA06

SMD High Voltage NPN Transistors

SMD Hochspannungs-NPN-Transistoren

IC

= 500 mA

hFE > 100

Tjmax = 150°C

VCEO = 80 V

Ptot = 250 mW

Version 2018-01-18

SOT-23

(TO-236)

1 = B

2 = E

3 = C

Dimensions - Maße [mm]

Typical Applications

Signal processing,

Switching, Amplification

Commercial grade 1)

Typische Anwendungen

Signalverarbeitung,

Schalten, Verstärken

Standardausführung 1)

Features

General Purpose

Compliant to RoHS, REACH,

Conflict Minerals 1)

Besonderheiten

Universell anwendbar

Konform zu RoHS, REACH,

Konfliktmineralien 1)

Mechanical Data 1)

Mechanische Daten 1)

Taped and reeled

3000 / 7“

Gegurtet auf Rolle

Weight approx.

0.01 g

Gewicht ca.

Case material

UL 94V-0

Gehäusematerial

Solder & assembly conditions

260°C/10s

Löt- und Einbaubedingungen

MSL = 1

Type

Code

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

1GM

MMBTA56

Maximum ratings 2)

Grenzwerte 2)

Collector-Emitter-voltage – Kollektor-Emitter-Spannung

B open

VCEO

80 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

80 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

4 V

Power dissipation – Verlustleistung

Ptot

250 mW 3)

Collector current – Kollektorstrom

DC

IC

500 mA

Base current – Basisstrom

I

B

100 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 4)

- VCE = 1 V

- IC = 10 mA

- IC = 100 mA

hFE

100

–

1

Please note the detailed information on our website or at the beginning of the data book

Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches

2

TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben

3

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

4

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

Pb

RoHS

1.1

+0.1

0.4+0.1

2.9 ±0.1

1

2

3

Type

Code

1.9±0.1

-0.05

-0.2

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