3

®

ISO808

POWER SUPPLIES

Specified Performance

Must be

≤ V

ANA

+4.75

+5

+5.25

V

+4.75

+5

+5.25

V

+4.75

+5.25

V

4.2

mA

16

mA

10.8

mA

Power Dissipation

175

mW

TEMPERATURE RANGE

Specified Performance

–40

+85

°C

Storage

–65

+150

°C

Thermal Resistance,

φ

JA

Plastic DIP

75

°C/W

NOTES: (1) LSB means Least Significant Bit. One LSB for the

±10V input range is 4.88mV. (2) Typical rms noise at worst case transition. (3) As measured with

fixed resistors shown in Figure 7b. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale or +Full Scale untrimmed

deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5)

All specifications in dB are referred to a full-scale input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades

to 60dB. (7) Recovers to specified performance after 2 x FS input overvoltage. (8) All devices receive a 1s test. Failure criterion is

≥ 5 pulses of ≥ 5pC. (9) Tested

at 2500Vrms, 50Hz limit 10

µA.

ELECTRICAL

ISO808P

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

ABSOLUTE MAXIMUM RATINGS

REF ........................................... Indefinite Short to AGND,

Ground Voltage Differences: DGND and AGND ...............................

±0.3V

Maximum Junction Temperature ................................................... +165

°C

Internal Power Dissipation ............................................................. 700mW

Lead Temperature (soldering, 10s) ................................................ +300

°C

MAXIMUM INTEGRAL

TYPICAL SIGNAL-TO-

SPECIFICATION

PRODUCT

LINEARITY ERROR (LSB)

(NOISE + DISTORTION) RATIO (dB)

TEMPERATURE RANGE (

PACKAGE

ISO808P

±0.9

70

–40

°C to +85°C

28-Pin Plastic DIP

PACKAGE INFORMATION

PACKAGE DRAWING

PRODUCT

PACKAGE

ISO808P

28-Pin Plastic DIP

215-1

NOTE: (1) For detailed drawing and dimension table, please see end of data

sheet, or Appendix C of Burr-Brown IC Data Book.

ORDERING INFORMATION

ELECTROSTATIC

DISCHARGE SENSITIVITY

Electrostatic discharge can cause damage ranging from per-

formance degradation to complete device failure. Burr-

Brown Corporation recommends that all integrated circuits

be handled and stored using appropriate ESD protection

methods.

ESD damage can range from subtle performance degrada-

tion to complete device failure. Precision integrated circuits

may be more susceptible to damage because very small

parametric changes could cause the device not to meet

published specifications.