BC846AS datasheet(3/7 Pages) DIODES

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BC846AS

Document number: DS30833 Rev. 8 - 2

3 of 7

www.diodes.com

October 2017

BC846AS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic (Note 7)

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

—

IC = 100µA, IB = 0

Collector-Emitter Breakdown Voltage

BVCEO

—

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA, IC = 0

DC Current Gain

hFE

110

—

220

—

VCE = 5V, IC = 2mA

Collector-Emitter Saturation Voltage

VCE(SAT)

—

200

250

600

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

Base-Emitter Saturation Voltage

VBE(SAT)

—

700

900

—

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

Base-Emitter Voltage

VBE(ON)

580

—

660

—

700

770

VCE = 5V, IC = 2mA

VCE = 5V, IC = 10mA

Collector-Cutoff Current

ICBO

—

µA

VCB = 40V

VCB = 30V, TA = +125°C

Emitter-Cutoff Current

ICES

—

VCE = 80V, IC = 0

Gain Bandwidth Product

100

—

MHz

VCE = 5V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

2.0

—

VCB = 10V, f = 1MHz

Note:

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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