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BC846ASQ Datasheet(PDF) 3 Page - Diodes Incorporated

Part # BC846ASQ
Description  65V DUAL NPN SMALL SIGNAL TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC846ASQ Datasheet(HTML) 3 Page - Diodes Incorporated

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BC846ASQ
Document number: DS39270 Rev. 2 - 2
3 of 7
www.diodes.com
October 2017
© Diodes Incorporated
BC846ASQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
80
V
IC = 10μA
Collector-Emitter Breakdown Voltage
BVCEO
65
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
6
V
IE = 1μA
DC Current Gain
hFE
110
220
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
VCE(SAT)
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
700
900
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
VBE(ON)
580
660
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current
ICES
ICBO
ICBO
15
15
5.0
nA
nA
µA
VCE = 80V
VCB = 40V
VCB = 30V, TA = +150°C
Gain Bandwidth Product
fT
100
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCB
2
pF
VCB = 10V, f = 1.0MHz
Note:
8. For Short duration pulse test used to minimize self-heating effect.



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