AM29DS323DB110 datasheet(2/54 Pages) AMD

2 / 54 page

PRELIMINARY

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 23480

Rev: A Amendment/+3

Issue Date: November 22, 2000

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29DS323D

32 Megabit (4 M x 8-Bit/2 M x 16-Bit)

CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

s Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Zero latency between read and write operations

s Multiple bank architectures

— Two devices available with different bank sizes (refer

to Table 3)

s Secured Silicon (SecSi

™) Sector

—

Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

—

Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

— 64 Kbyte sector size

s Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

s Package options

— 48-ball FBGA

— 48-pin TSOP

s Top or bottom boot block

s Manufactured on 0.23 µm process technology

s Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

PERFORMANCE CHARACTERISTICS

s High performance

— Access time as fast 110 ns

— Program time: 13 µs/word typical;

with Accelerate function, 7 µs/word typical

s Ultra low power consumption (typical values)

— 1 mA active read current at 1 MHz

— 5 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

s Minimum 1 million write cycles guaranteed per sector

s 20 Year data retention at 125

°C

— Reliable operation for the life of the system

SOFTWARE FEATURES

s Data Management Software (DMS)

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

— Eases sector erase limitations

s Supports Common Flash Memory Interface (CFI)

s Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

s Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

s Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

s Any combination of sectors can be erased

s Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

s Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to reading array data

s WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

— Acceleration (ACC) function provides accelerated

program times

s Sector protection

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

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