FCX558 datasheet(4/7 Pages) DIODES

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FCX558

Datasheet Number: DS33059 Rev. 7 - 2

4 of 7

www.diodes.com

April 2017

FCX558

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-400

-540

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-400

-510

IC = -1mA

Collector-Emitter Breakdown Voltage

BVCES

-400

-540

IC = -100µA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.2

IE = -100µA

Collector Cutoff Current

ICBO

<-1

-100

VCB = -320V

Emitter Cutoff Current

ICES

<-1

-100

VCE = -320V

Emitter Cutoff Current

IEBO

<-1

-20

VEB = -6V

DC Current Transfer Static Ratio (Note 11)

hFE

100

300

IC = -1mA, VCE = -10V

IC = -50mA, VCE = -10V

IC = -100mA, VCE = -10V

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

-0.2

-0.5

IC = -20mA, IB = -2mA

IC = -50mA, IB = -6mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

-0.9

IC = -50mA, IB = -5mA

Base-Emitter Turn-on Voltage (Note 11)

VBE(on)

-0.9

IC = -50mA, VCE = -10V

Transitional Frequency

MHz

IE = -10mA, VCE = -20V

f = 20MHz

Output Capacitance

Cobo

VCB = -20V, f = 1MHz,

Switching Times

ton

IC = -50mA, VC = -100V

IB1 = -5mA, IB2 = -10mA

toff

1,600

Note:

11. Measured under pulsed conditions. Pulse width

≤ 300μs. Duty cycle ≤ 2%.

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