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PIP202-12M Datasheet(PDF) 5 Page - NXP Semiconductors |
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PIP202-12M Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 20 page ![]() Philips Semiconductors PIP202-12M DC to DC converter powertrain Product data Rev. 01 — 15 July 2002 5 of 20 9397 750 10031 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 7.4 3-state function If the input from the PWM controller becomes high impedance (3-state) for longer than144 ns, then both MOSFETs are turned off and the VI input is driven to 2.5 V by an internal 2 x 10 k Ω resistor voltage divider between an internal 5 V reference and ground. 8. Limiting values [1] Pulse width and repetition rate limited by maximum value of Tj. [2] Assumes a thermal resistance from junction to printed-circuit board of 5 K/W. Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDDC control circuit supply voltage −0.5 14 V VDDO output stage supply voltage −0.5 25 V VI input voltage −0.5 5.25 V VO output voltage −0.5 VDDO + 0.5 V VCB bootstrap voltage −0.5 VO + 14 V IO(AV) average output current VDDC = 12 V; Tpcb ≤ 110 °C; Figure 5 -25 A IORM repetitive peak output current VDDC = 12 V; tp ≤ 10 µs [1] - 200 A Ptot total power dissipation Tpcb =25 °C [2] -25 W Tpcb =90 °C [2] -12 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C VDDC =12V; VDDO = 12 V; fi = 500 kHz; VO = 1.6 V. Fig 5. Average output current as a function of printed-circuit board temperature. 03ag41 0 10 20 30 0 50 100 150 Tpcb (°C) IO(AV) (A) |
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