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IPD60R280P7 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IPD60R280P7 Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 14 page  5 600VCoolMOSªP7PowerTransistor IPD60R280P7 Rev.2.1,2018-03-02 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.19mA Zero gate voltage drain current IDSS - - - 10 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 0.214 0.501 0.280 - Ω VGS=10V,ID=3.8A,Tj=25°C VGS=10V,ID=3.8A,Tj=150°C Gate resistance RG - 7 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 761 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 14 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 27 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) - 280 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 17 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0 Ω;seetable9 Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0 Ω;seetable9 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0 Ω;seetable9 Fall time tf - 9 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0 Ω;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 4 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate charge total Qg - 18 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=3.8A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V |
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