unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

60

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

0.8

1.3

1.8

V

-

6.5

8.0

mΩ

Drain-Source On-State Resistance

-

7.5

9.5

mΩ

Forward Transconductance

20

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

4000

-

PF

Output Capacitance

-

290

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

210

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

8.5

-

nS

Turn-on Rise Time

-

7

-

nS

Turn-Off Delay Time

-

40

-

nS

Turn-Off Fall Time

-

15

-

nS

Total Gate Charge

-

90.3

nC

Gate-Source Charge

-

10.9

nC

Gate-Drain Charge

-

20.6

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

1.2

V

Diode Forward Current

(Note 2)

-

-

80

A

Reverse Recovery Time

-

32

-

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 20A

di/dt = 100A/μs

(Note3)

-

45

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production