Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

1.67

/W

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

30

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1.0

1.5

2.0

V

-

1.35

1.65

mΩ

Drain-Source On-State Resistance

-

1.8

2.2

mΩ

Forward Transconductance

80

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

6150

7300

PF

Output Capacitance

-

1550

2000

PF

Reverse Transfer Capacitance

F=1.0MHz

-

105

155

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

13

-

nS

Turn-on Rise Time

-

7.5

-

nS

Turn-Off Delay Time

-

51

-

nS

Turn-Off Fall Time

-

8.6

-

nS

Total Gate Charge

-

98

117

nC

Gate-Source Charge

-

16

nC

Gate-Drain Charge

-

11

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

1.2

V

Diode Forward Current

(Note 2)

-

-

170

A

Reverse Recovery Time

-

32

nS

Reverse Recovery Charge

Qrr

di/dt = 100A/μs

(Note3)

-

112

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25

Ω