Features

• High Surge Capability

DO-8 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S150J (R)

S150K (R)

Unit

Repetitive peak reverse voltage

600

800

V

Silicon Standard

Recovery Diode

Conditions

1200

S150J thru S150QR

S150Q (R)

1000

S150M (R)

2. Reverse polarity (R): Stud is anode.

pp

g

RMS reverse voltage

420

560

V

DC blocking voltage

600

800

V

Continuous forward current

150

150

A

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

S150J (R)

S150K (R)

Unit

Diode forward voltage

1.2

1.2

10

10

μA

15

15

mA

Thermal characteristics

Thermal resistance, junction -

case

0.35

0.35

°C/W

-55 to 150

-55 to 150

840

1200

1000

Surge non-repetitive forward

current, Half Sine Wave

-55 to 150

S150Q (R)

10

10

S150M (R)

0.35

0.35

1.2

1.2

9

Conditions

700

3140

3140

-55 to 150

150

150

15

A

3140

Reverse current

3140

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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