MCC95-08io8B

V

=

V

kA²s

kA²s

kA²s

kA²s

Symbol

Definition

Ratings

typ.

max.

I

V

I

A

V

T

1.29

R

0.22

K/W

min.

116

V

V

200

T

= 25°C

VJ

T

=

°C

VJ

mA

5

V

=

V

T

= 25°C

VJ

I =

A

T

V

T =

°C

C

85

P

tot

455

W

T

= 25°C

C

150

800

forward voltage drop

total power dissipation

Conditions

Unit

1.50

T

= 25°C

VJ

125

V

T0

V

0.85

T

=

°C

VJ

125

2.4

mΩ

V

1.28

T

=

°C

VJ

I =

A

T

V

150

1.70

I =

A

300

I =

A

300

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

V

800

T

= 25°C

VJ

I

A

182

P

GM

W

t = 30 µs

10

max. gate power dissipation

P

T

=

°C

C

125

W

t =

5

P

W

0.5

average gate power dissipation

119

junction capacitance

V =

V

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

TSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

125

I²t

T

= 45°C

value for fusing

T

=

°C

125

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T

=

°C

VJ

125

2.25

2.43

18.3

17.7

kA

kA

kA

kA

1.92

2.07

25.3

24.6

800

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

A/µs

150

repetitive, I =

T

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V

T

=

°C

25

(dv/dt)

T

= 125°C

critical rate of rise of voltage

A/µs

500

V/µs

t =

µs;

I

A; V = ⅔ V

R

= ∞; method 1 (linear voltage rise)

VJ

D

VJ

250 A

T

P

di /dt

A/µs;

G

=0.45

DRM

cr

V = ⅔ V

DRM

GK

1000

2.5

V

T

=

°C

-40

VJ

gate trigger current

V = 6 V

T

=

°C

25

D

VJ

150

mA

T

=

°C

-40

VJ

2.6

V

200

mA

V

GD

gate non-trigger voltage

T

=

°C

VJ

0.2

V

I

GD

gate non-trigger current

10

mA

V = ⅔ V

D

DRM

125

latching current

T

=

°C

VJ

450

mA

25

t

µs

10

I

A;

G

= 0.45

di /dt

A/µs

G

= 0.45

holding current

T

=

°C

VJ

200

mA

I

H

25

V = 6 V

D

R

= ∞

GK

gate controlled delay time

T

=

°C

VJ

2

µs

t

gd

25

I

A;

G

= 0.45

di /dt

A/µs

G

= 0.45

V = ½ V

D

DRM

turn-off time

T

=

°C

VJ

185

µs

di/dt =

A/µs

10

dv/dt =

V/µs

20

V =

R

100 V; I

A;

V = ⅔ V

DRM

t

µs

non-repet., I = 116 A

T

100

R

thCH

thermal resistance case to heatsink

K/W

Thyristor

900

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

T

R/D

R/D

200

0.20

IXYS reserves the right to change limits, conditions and dimensions.

20161222c

Data according to IEC 60747and per semiconductor unless otherwise specified

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