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EN29F080 Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers

Part # EN29F080
Description  8 Megabit (1024K x 8-bit) Flash Memory
PDF  37 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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EN29F080 Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
8
EN29F080
Rev. C, Issue Date: 2001/07/05
Hardware Data protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by false system level signals during Vcc power up and power down transitions, or
from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than
VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE , CE or WE do not initiate a write cycle.
Logical Inhibit
If CE =VIH or WE=VIH, writing is inhibited. To initiate a write cycle, CE and WE must be a logical
“zero”. If CE , WE , and OE are all logical zero (not recommended usage), it will be considered a
write.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = VIL, WE = VIL and OE = VIH, the device will not accept commands on the rising edge of
WE .



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