2

RF Device Data

Freescale Semiconductor, Inc.

MMRF1015NR1 MMRF1015GNR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1A

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

III

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

1

Adc

On Characteristics

Gate Threshold Voltage

1.5

2.3

3

Vdc

Gate Quiescent Voltage

2

3.1

4

Vdc

Drain--Source On--Voltage

0.15

0.27

0.35

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

—

0.32

—

pF

Output Capacitance

—

10

—

pF

Input Capacitance

—

23

—

pF

Test, 100 kHz Tone Spacing

Power Gain

17.5

18

20.5

dB

Drain Efficiency

31

32

—

%

Intermodulation Distortion

IMD

—

--37

--33

dBc

Input Return Loss

IRL

—

--18

--10

dB

Typical Performance (In Freescale 450 MHz Demo Board, 50

Two--Tone Test, 100 kHz Tone Spacing

Power Gain

—

20

—

dB

Drain Efficiency

—

33

—

%

Intermodulation Distortion

IMD

—

--40

—

dBc

Input Return Loss

IRL

—

--10

—

dB

1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing

(GN) parts.