Transistors with built-in Resistor

1

Publication date: December 2003

SJH00012CED

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 10 µA, I

E

= 050

V

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

µA

Collector-emitter cutoff current (Base open)

= 50 V, I

B

= 01

µA

Emitter-base

UNR2221

mA

cutoff current UNR2222

2

(Collector open) UNR2223/2224

1

Forward current UNR2221

40



transfer ratio

UNR2222

50

UNR2223/2224

60

Collector-emitter saturation voltage

0.25

V

Output voltage high-level

4.9

V

Output voltage low-level

= 5 V, V

B

= 3.5 V, R

L

= 500 Ω

0.2

V

Silicon NPN epitaxial planar type

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package allowing easy automatic insertion through tape

packing and magazine packing

■ Resistance by Part Number

• UNR2221 (UN2221)

9A

2.2 k

Ω

2.2 k

Ω

• UNR2222 (UN2222)

9B

4.7 k

Ω

4.7 k

Ω

• UNR2223 (UN2223)

9C

10 k

Ω

10 k

Ω

• UNR2224 (UN2224)

9D

2.2 k

Ω

10 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

Unit: mm

■ Electrical Characteristics T

a

= 25°C ± 3°C

Internal Connection

Note) The part numbers in the parenthesis show conventional part number.

B

C

E

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Collector current

500

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚