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TIPL760C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TIPL760C
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIPL760C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
TIPL760C
FEATURES
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
4
A
ICM
Peak collector current
8
A
PC
Collector Power Dissipation
@TC=25℃
75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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