©

2000

MOS FIELD EFFECT TRANSISTOR

2SJ599

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

PRELIMINARY DATA SHEET

Document No.

D14644EJ1V0DS00 (1st edition)

Date Published

November 2000 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SJ599 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

FEATURES

• Low on-state resistance:

• Built-in gate protection diode

• TO-251/TO-252 package

–60

V

V

A

Drain Current (pulse)

Note1

A

35

W

1.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Single Avalanche Current

Note2

–20

A

Single Avalanche Energy

Note2

40

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1%

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ599

TO-251

2SJ599-Z

TO-252

(TO-251)

(TO-252)