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STW3100 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW3100
Description  TRANSCEIVER MODULE
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW3100 Datasheet(HTML) 3 Page - STMicroelectronics

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STW3100
3.2 Receive Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
fRX2
Input Frequency
EGSM900
925
960
MHz
fRX3
GSM1800
1805
1880
fRX4
GSM1900
1930
1990
Zin
Input impedance
Single-Ended
50
VSWR_in
Input VSWR into 50 ohm
1.8
2.3
Ripple
Gain Flatness over the Frf
band
12
dB
Gmax
Total max gain
in 2Vpp Mode
74
79
dB
in 4Vpp Mode
80
85
∆G
Gain range
66
dB
AGC gain step
-
3
-
AGC linearity
-1
+1
dB
NF
Noise figure DSB
Low Band
5.5
dB
High Band
6
ICP-1dB
1dB Input Compression Point
@ Low gain, 0kHz offset
Low Band
-23
-20
dBm
High Band
-26
-23
IIP3
Third Order Input Intercept
Point @ High Front-end gain
Low Band
-14
-10
dBm
High Band
-14
-12
IIP2
2nd Order Input Intercept Point
High Front-end gain
+44
dBm
C/N
Out-of-band Blocking (a, b, c, d)
in Low-Band & (a , d) in High-
Band
Pwanted= -100 dBm,
Pinterf= -1 dBm
(1 dB Insertion Losses for
antenna switch)
9dB
C/N
Out-of-band Blocking (c, b) in
High-Band
Pwanted= -100 dBm,
Pinterf= -13 dBm
9dB
C/N
In-Band Blocking @
|F-Fo|> 3 MHz
Pwanted= -100 dBm,
Pinterf= -24 dBm (LB)
Pinterf= -27 dBm (HB)
9dB
C/N
In-Band Blocking @
1.6 MHz < |F-Fo| < 3 MHz
Pwanted= -100 dBm,
Pinterf= -34 dBm
9dB
C/N
In-Band Blocking @
600 kHz < |F-Fo| < 1.6 MHz
Pwanted= -100 dBm,
Pinterf= -44 dBm
9dB
BW_GMSK
BW_EDGE
3 dB Channel bandwidth
after calibration
90
110
110
140
kHz
Att GMSK
Mode
Channel response attenuation
@ 200 kHz
@ 400 kHz
@ 600 kHz
15
50
58
18
51
62
dB
Att EDGE
Mode
Channel response attenuation
@ 200 kHz
@ 400 kHz
@ 600 kHz
4
45
52
7
48
55
dB
Tdelay
Group delay variation
Between 0 & 67.7 kHz
1.8
2.5
us
Spurs
Spurious emission @ RF input
@ 9 kHz
−1 GHz
@ 1 GHz
− 12 75 GHz
-57
-47
dBm



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