SS8050 datasheet(1/2 Pages) YIXIN

Part #	SS8050

Description	Silicon Epitaxial Planar Transistor

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Manufacturer	YIXIN [Shenzhen Yixinwei Technology Co., Ltd.]

Direct Link	http://www.szyxwkj.com

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Silicon Epitaxial Planar Transistor SS8050

FEATURES

Collector Current.(IC= 1.5A

）

Complementary To SS8550.

Collector dissipation:PC=300mW(TC=25

℃)

APPLICATIONS

High Collector Current.

ORDERING INFORMATION

Type No.

Marking

Package Code

SS8050

Y1

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Ratings

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

1.5

A

PC

Collector Dissipation

300

mW

Tj,Tstg

Junction and Storage Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO

IC=2mA,IB=0

B

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=40V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V,IB=0

B

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

VCE=1V,IC=100mA

120

400

DC current gain

hFE

VCE=1V,IC=800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=800 mA, IB= 80mA

B

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=800 mA, IB= 80mA

B

1.2

V

Base-emitter voltage

VBE

VCE=1V IC=10mA

1

V

Transition frequency

fT

VCE=10V, IC= 50mA

f=30MHz

100

MHz

1of 2

A

E

J

L

TOP VIEW

M

B C

H

G

D

K

C

B

E

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

E

B

C

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