S71PL129JC0BAI9P2 datasheet(21/149 Pages) SPANSION

21 / 149 page

June 4, 2004 S29PL129J_MCP_00_A0

S29PL129J for MCP

Advance

Informatio n

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data

to the device and erasing sectors of memory), the system must drive WE# and

CE1# or CE#2 to VIL, and OE# to VIH.

The device features an Unlock Bypass mode to facilitate faster programming.

Once a bank enters the Unlock Bypass mode, only two write cycles are required

to program a word, instead of four. “Word Program Command Sequence” on page

46 has details on programming data to the device using both standard and Unlock

Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device.

Table 4 indicates the set of address space that each sector occupies. A “bank ad-

dress” is the set of address bits required to uniquely select a bank. Similarly, a

“sector address” refers to the address bits required to uniquely select a sector.

“Command Definitions” on page 45 has details on erasing a sector or the entire

chip, or suspending/resuming the erase operation.

ICC2 in the DC Characteristics table represents the active current specification for

the write mode. See the timing specification tables and timing diagrams in “Re-

set” for write operations.

Accelerated Program Operation

The device offers accelerated program operations through the ACC function. This

function is primarily intended to allow faster manufacturing throughput at the

factory.

If the system asserts VHH on this pin, the device automatically enters the afore-

mentioned Unlock Bypass mode, temporarily unprotects any protected sectors,

and uses the higher voltage on the pin to reduce the time required for program

operations. The system would use a two-cycle program command sequence as

required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin re-

turns the device to normal operation. Note that VHH must not be asserted on

WP#/ACC for operations other than accelerated programming, or device damage

may result. In addition, the WP#/ACC pin should be raised to VCC when not in

use. That is, the WP#/ACC pin should not be left floating or unconnected; incon-

sistent behavior of the device may result.

Autoselect Functions

If the system writes the autoselect command sequence, the device enters the au-

toselect mode. The system can then read autoselect codes from the internal

read cycle timings apply in this mode. See “Secured Silicon Sector Addresses” on

page 29 and “Autoselect Command Sequence” on page 46 for more information.

Standby Mode

When the system is not reading or writing to the device, it can place the device

in the standby mode. In this mode, current consumption is greatly reduced, and

the outputs are placed in the high impedance state, independent of the OE#

input.

Bank 2A

00, 01, 10

Bank 2B

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