AF9928N

N-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Aug 11, 2005

2/5

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

5

3.5

A

25

A

Total Power Dissipation

1

W

Linear Derating Factor

0.008

W/ºC

Storage Temperature Range

-55 to 150

ºC

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Value

Units

Rthj-a

Max.

125

Note 1: Surface mounted on 1 in

Note 2: Pulse width limited by Max. junction temperature.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature

Coefficient

Reference to 25

-

0.02

-

V/

-

-

23

mΩ

Static Drain-Source On-Resistance

(Note 3)

-

-

29

mΩ

Gate Threshold Voltage

0.5

-

-

V

Forward Transconductance

-

21

-

S

-

-

1

uA

Drain-Source Leakage Current

-

-

25

uA

Gate-Source Leakage

-

-

±10

uA

-

15.9

-

nC

Gate-Source Charge

-

1.5

-

nC

Gate-Drain (“Miller”) Charge

-

7.4

-

nC

-

6.2

-

ns

Rise Time

-

9

-

ns

Turn-Off Delay Time

-

30

-

ns

Fall-Time

-

11

-

ns

Input Capacitance

-

530

-

pF

Output Capacitance

-

245

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

125

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current (Body

Diode)

-

-

0.83

A

-

-

1.2

V

Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.