AP9926EO datasheet(1/6 Pages) ETC1

Part #	AP9926EO

Description	Power MOSFETs from APEC provide the designer with the best combination of fast switching

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Manufacturer	ETC1 [List of Unclassifed Manufacturers]

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Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼ Low on-resistance

BVDSS

20V

▼

▼ Capable of 2.5V gate drive

RDS(ON)

28mΩ

▼

▼ Low drive current

ID

4.6A

▼

▼ Surface mount package

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TA=25℃

A

ID@TA=70℃

A

IDM

A

PD@TA=25℃

W

W/℃

TSTG

℃

TJ

℃

Symbol

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

3

Max.

125

℃/W

Data and specifications subject to change without notice

20112502

AP9926EO

Parameter

Rating

Drain-Source Voltage

20

Gate-Source Voltage

± 12

Continuous Drain Current

3

4.6

Continuous Drain Current

3

3.7

Pulsed Drain Current

1

20

Total Power Dissipation

1

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.008

Thermal Data

Parameter

Storage Temperature Range

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

D2

S2

G2

D1

S1

G1

TSSOP-8

S1

G1

D1

S2

G2

D2

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