1

Publication date: December 2002

SJC00287AED

Transistors

■ Electrical Characteristics T

a

= 25°C ± 3°C

2SC5829

Silicon NPN epitaxial planar type

For high speed switching

■ Features

• Allowing the small current and low voltage operation

• High transition frequency f

T

• Suitable for high-density mounting and downsizing of the equip-

ment for Ultraminiature leadless package

0.6 mm

× 1.0 mm (height 0.39 mm)

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

= 10 V, I

E

= 01

µA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

100

200



Transition frequency

= 1 V, I

C

= 1 mA, f = 0.8 GHz

4

GHz

Collector output capacitance

0.4

pF

(Common base, input open circuited)

Forward transfer gain

S

2

6

dB

Maximum unilateral power gain

15

dB

Noise figure

NF

= 1 V, I

C

= 1 mA, f = 0.8 GHz

3.5

dB

Unit: mm

Marking Symbol: X

2

1

3

0.39

+0.01

−0.03

2

1

3

1: Base

2: Emitter

3: Collector

ML3-N2 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

10

V

Collector-emitter voltage (Base open)

7V

Emitter-base voltage (Collector open)

2V

Collector current

10

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.