SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 3347

Issue 3

Page 1 of 1

BDS16 / BDS17

•

High Voltage

•

Hermetic TO220M (T0-257AB) Isolated Metal Package

•

Ideally suited for Power Linear, Switching

and general Purpose Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

BDS16

BDS16

BDS16

BDS16

BDS17

BDS17

BDS17

BDS17

VCBO

Collector – Base Voltage (IE = 0)

120V

150V

VCEO

Collector – Emitter Voltage (IB = 0)

120V

150V

VEBO

Emitter – Base Voltage (IC = 0)

5V

IE, IC

Emitter, Collector Current

8A

IB

Base Current

2A

PD

Total Power Dissipation at

TC = 25°C

43.75W

TJ

Junction Temperature Range

+200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

RθJC

Thermal Resistance, Junction To Case

4.0

°C/W