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TSM048NB06LCR Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM048NB06LCR Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
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3 / 6 page ![]() TSM048NB06LCR Taiwan Semiconductor 3 Version: B1804 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) ID, Drain Current (A) Qg, Gate Charge (nC) TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V) 0 2 4 6 8 10 0 30 60 90 120 V DS=30V I D=16A 0 8 16 24 32 40 0 1 2 3 4 5 V GS=10V V GS=7V V GS=5V V GS=4.5V V GS=4V V GS=3.5V V GS=3V 0 0.002 0.004 0.006 0.008 0.01 0 10 20 30 40 V GS=10V V GS=4.5V 0 0.005 0.01 0.015 0.02 0.025 0.03 3 4 5 6 7 8 9 10 I D=16A 0 8 16 24 32 40 0 1 2 3 4 5 25℃ -55℃ 175℃ 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 V GS=10V I D=16A |
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