STPS20120CT datasheet(3/6 Pages) STMICROELECTRONICS

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STPS20120C

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Figure

Normalized

avalanche

power

derating versus pulse duration

Figure

Normalized

avalanche

power

derating versus junction temperature

Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration

Figure 7: Reverse leakage current versus

reverse voltage applied

(typical values, per

diode)

Figure 8: Junction capacitance versus reverse

voltage applied (typical values, per diode)

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

100

120

140

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

T =25°C

T =75°C

T =125°C

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

110

120

I (mA)

V (V)

T =125°C

T =25°C

T =50°C

T =75°C

T =100°C

T =150°C

100

1000

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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