2SC4815 datasheet(1/6 Pages) NEC

Part #	2SC4815

Description	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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Manufacturer	NEC [NEC]

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1998

©

Document No. D15605EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC4815

NPN SILICON

EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.

This transistor is ideal for use as a driver in DC/DC converters and actuators.

In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost

reduction.

FEATURES

• High hFE and low VCE(sat):

VCE(sat)

≤ 0.3 V @IC = 3.0 A, IB = 0.15 A

hFE

≥ 100

@VCE = 2.0 V, IC = 1.0 A

• Available for auto mount in radial taping specifications

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

100

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

5.0

A

Collector current (pulse)

IC(pulse)*10

A

Base current (DC)

IB(DC)

2.5

A

Total power dissipation

PT

1.8

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

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