S9014 datasheet(1/1 Pages) MICRO-ELECTRONICS

Part #	S9014

Description	The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits.

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Manufacturer	MICRO-ELECTRONICS [Micro Electronics]

Direct Link	http://www.microelectr.com.hk

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S9014

DESCRIPTION

The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio

output stage and converter/inverter circuits.

ABSOLUTE MAXIMUM RATINGS

Maximum Temperatures

Storage Temperature

-55~135℃

Operating Temperature

135℃

Lead Temperature (Soldering, <10s)

230℃

Maximum Power Dissipation

Total Disspation at 25℃ Ambient Temperature

0.4W

Maximum Voltage

VCBO Collector to Base Voltage

50V

VCEO Collector to Emitter Voltage

45V

VEBO Emitter to Base Voltage

5V

IC Collector Current (continuous)

0.5A

ELECTRICAL CHARACTERISTICS (Ta=25℃ Unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX. UNITS

TEST

CONDITIOMNS

HFE1

DC current gain

60

1000

Ic=1mA Vce=5V

VCE(SAT)

Collector Saturation Voltage

0.3

V

Ic=100mA Ib=10mA

VBE

Base-Emitter Voltage

0.85

V

Ic=1mA VCE=5V

BVCEO

Collector to Emitter Breakdown Voltage

45

V

Ic=1mA Ib=0

BVCBO

Collector to Base Breakdown Voltage

50

V

Ic=100μA Ie=0

BVEBO

Emitter to Base Breakdown Voltage

5

V

Ie=100μA Ic=0

ICBO

Collector Cutoff Current

0.1

μA

Vcb=50V Ie=0

fT

Transition frequency

150

Ic=10mA Vce=5V f=30MH Z

CCB

Collector to Base Capacitance

6

pF

Vcb=10V Ic=0 f=1MH Z

Note:

HFE1 classification: A: 60~150 B: 100~300 C: 200~600 D: 400~1000

REV:0

25-May-05

MICRO

1

2

3

S9014:

1. Emitter

2. Base

3. Collect

MICRO ELECTRONICS LTD.

7

th Floor Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Hong Kong.

Wang Chiu Road P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

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