2SC2712 datasheet(1/3 Pages) SHENZHENSLS

Part #	2SC2712

Description	Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	SHENZHENSLS [SHENZHEN SLS TECHNOLOGY CO.,LTD.]

Direct Link	http://www.sls-semicon.com/

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1 / 3 page

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.

SOT-23 封装半导体晶体管/SOT-23 Plastic-Encapsulate Transistors

2SC2712( NPN )

特点/Features：

噪声低，放大线性好;

用途/Applications：

用于一般放大。

极限参数/Absolute maximum ratings(Ta=25℃)

参数/Parameter

符号/ Symbol

数值/Value

单位/Unit

集电极-基极电压/Collector-Base Voltage

V

CBO

60

V

集电极-发射极电压/Collector-Emitter Voltage

V

CEO

50

V

发射极-基极电压/Emitter-Base Voltage

V

EBO

5

V

集电极连续电流/Collector Current Continuous

I

C

0.15

A

集电极耗散功率/Collector Power Dissipation

P

C

0.15

W

结温/Junction Temperature

Tj

150

℃

储存温度/Storage Temperature

Tstg

-55～150

℃

电性能参数/Electrical characteristics (Ta=25℃)

参数

符号

测试条件

最小值

典型值

最大值

单位

集电极-基极击穿电压

V

BR(CBO)

I

C=100μA,IE=0

60

V

集电极-发射极击穿电压

V

BR(CEO)

I

C=1mA,IB=0

50

V

发射极-基极击穿电压

V

BR(EBO)

I

E=100μA,IC=0

5

V

集电极截止电流

I

CBO

V

CB=60V,IE=0

0.1

μA

发射极截止电流

I

EBO

V

EB=5V,IC=0

0.1

μA

直流电流增益

h

FE

V

CE=6V,IC=2mA

70

700

集电极-发射极饱和压降

V

CE(sat)

I

C=100mA,IB=10mA

0.1

0.25

V

特征频率

f

T

V

CE=10V,IC=1mA

80

MHz

输出电容

C

ob

V

CB=10 V,IE=0,f=1MHz

2.0

3.5

pF

噪声系数

NF

V

CE=6V,IC=0.1mA,f=1kHz,

Rg=10KΩ

1.0

10

dB

Marking And hFE 分档/Classification of hFE

档位/Rank

O

Y

GR

BL

范围/Range

70～140

120～240

200～400

350～700

印章/Marking

LO

LY

LG

LL

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2SC2712 Datasheet(PDF) 1 Page - SHENZHEN SLS TECHNOLOGY CO.,LTD.

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