FS4422 datasheet(4/6 Pages) FORTUNE

4 / 6 page

FS4422

Rev. 1.4

4/6

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

Max.

℃/W

Electrical Characteristics

Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10V, ID = 11A

12.6

mΩ

VGS = 4.5V, ID = 10A

19.6

mΩ

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

1.3

1.8

2.5

IDSS

Drain-Source Leakage Current (Tj = 25℃)

VDS =30V VGS = 0V

Drain-Source Leakage Current (Tj = 85℃)

VDS =30V VGS = 0V

IGSS

Gate-Source Leakage

VGS = ±20V VDS =0V

100

Diode Characteristics

VSD

Diode Forward Voltage

ISD=1A,VGS=0V

0.75

1.0

trr

Reverse Recovery Time

ISD=11A,dISD/dt=100A/

μs

17.5

Qrr

Reverse Recovery Charge

9.3

Dynamic Characteristics

Gate Resistance

VGS=VDS=0V,F=1MHz

0.5

0.7

0.85

Ciss

Input Capacitance

VGS=0V,VDS=15V

Frequency=1MHz

800

104

125

Coss

Output Capacitance

140

180

220

Crss

Reverse Transfer Capacitance

110

140

td(on)

Turn-on Delay Time

VGS=10V,VDS=15V,

RG=3Ω,RL=1.35Ω,

IDS=1A

4.5

6.5

Turn-on Rise Time

3,9

5.5

td(off)

Turn-off Delay Time

17.4

Turn-off Rise Time

3.2

Gate Charge Characteristics

Qg(10V)

Total Gate Charge

VGS=10V,VDS=15V,

IDS=11A

19.8

Qg(4.5V)

Total Gate Charge

9.8

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

3.5

Notes：

Pulse width ≦ 300us, duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing

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