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MSP08065V1 Datasheet(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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MSP08065V1 Datasheet(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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1 / 5 page ![]() MSP08065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier Benefits Higher safety margin against overvoltage 650 Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications Package Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-220 -2lead 1、Cathode 2、Anode 12 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter MSP08065V1 Units VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V IF Continuous Forward Current @Tc=25℃ @Tc=135℃ @Tc=150℃ 24 11 8 A IFRM Repetitive Peak Forward Surge Current @TC=25 ̊C fS @ C ̊C 56 35 A IFRM tp = 10 ms, Half Sine Wave @TC=110 ̊C 35 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C tp= 10 ms, Half Sine Wave @TC=110 ̊C 78 57 A IFSM Non-Repetitive Peak Forward Surge Current @TC=25 ̊C, tp= 10 us,pulse 200 A Ptot Power Dissipation @Tc=25℃ @Tc=110℃ 117 51 W Meipusen Co.,Ltd http://www.meipusen.com Rev1.2 Sep . 2018 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ̊ C page1 |
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