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FIR6N65LG Datasheet(PDF) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # FIR6N65LG
Description  N-Channel Power MOSFET
PDF  10 Pages
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Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR6N65LG Datasheet(HTML) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

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Source-Drain Diode Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current (Body Diode)
--
--
6
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
20
A
VSD
Diode Forward Voltage
IS=6A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
--
192
ns
Qrr
Reverse Recovery Charge
IS=6A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
--
844
n
C
Pulse width tp≤380µs,δ≤2%
Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
1.47
℃/W
RθJA
Junction-to-Ambient
110
℃/W
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10.0mH, I
D=7.1A, Start TJ=25℃
a3：I
SD =6A,di/dt
≤100A/us,V
DD≤BVDS, Start TJ=25℃
www.First-semi.com
Page 3/10
FIR6N65LG



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