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54HC86 Datasheet(PDF) 3 Page - Silicon Supplies |
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54HC86 Datasheet(HTML) 3 Page - Silicon Supplies |
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3 / 5 page ![]() Page 3 of 5 www.siliconsupplies.com Recommended Operating Conditions3 (Voltages referenced to GND) Absolute Maximum Ratings1 PARAMETER SYMBOL VALUE UNIT Supply Voltage (Referenced to GND) VCC -0.5 to +7.0 V DC Input Voltage (Referenced to GND) VIN -0.5 to VCC +0.5 V DC Output Voltage (Referenced to GND) VOUT -0.5 to VCC +0.5 V Clamp Diode Current IIK, IOK ±20 mA DC Output Current, per pad IOUT ±25 mA DC VCC or GND Current, per pad ICC ±50 mA Power Dissipation in Still Air 2 PD 750 mW Storage Temperature Range TSTG -65 to 150 °C 3. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND ≤ (VIN or VOUT) ≤ VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability. 2. Measured in plastic DIP package, results in die form are dependent on die attach and assembly method. PARAMETER SYMBOL MIN MAX UNITS DC Supply Voltage VCC 2 6 V DC Input or Output Voltage VIN ,VOUT 0 VCC V Operating Temperature Range TJ -55 +125 °C VCC = 2.0V 0 1000 VCC = 4.5V 0 500 Input Rise and Fall Times VCC = 6.0V tr, tf 0 400 ns LIMITS PARAMETER SYMBOL VCC CONDITIONS 25°C 85°C FULL RANGE 4 UNITS 2.0V 1.5 1.5 1.5 3.0V 2.1 2.1 2.1 4.5V 3.15 3.15 3.15 Minimum High-Level Input Voltage VIH 6.0V VOUT = 0.1V or VCC -0.1V │IOUT│≤ 20µA 4.2 4.2 4.2 V 2.0V 0.5 0.5 0.5 3.0V 0.9 0.9 0.9 4.5V 1.35 1.35 1.35 Maximum Low-Level Input Voltage VIL 6.0V VOUT = 0.1V or VCC -0.1V │IOUT│≤ 20µA 1.8 1.8 1.8 V DC Electrical Characteristics (Voltages Referenced to GND) High Speed CMOS Logic – 54HC86 Rev 1.0 21/11/17 4. −55˚C ≤ TJ ≤ +125˚C. |
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