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DAM40W30G Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM40W30G Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N+N-Channel Enhancement Mode MOSFET Features VDSS = 30V RDS(ON) Typ.5.5mΩ @ VGS = 10V Improved dv/dt capability Pb Free & RoHS Compliant Green Device Available Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ TC = 25°C ID 40 A @ TC = 100°C 25.3 Drain Current Pulsed@ TC = 25°C IDM 160 A Single Pulse Avalanche Energy EAS 88 mJ Single Pulse Avalanche Current IAS 42 A Maximum Power Dissipation PD 46 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case R θJC 2.7 °C/W DAM40W30G Note3 Apr.2018 |
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