GTRA384802FC-V1-R2 datasheet(1/5 Pages) CREE

Part #	GTRA384802FC-V1-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Advance Specification Data

Sheets describe products that are

being considered by Wolfspeed for

development and market intro-

duction. The target performance

shown in Advance Specifications

is not final and should not be used

for any design activity. Please

contact Wolfspeed about the fu-

ture availability of these products.

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 01, 2019-01-23

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTRA384802FC

Package H-37248C-4

Thermally-Enhanced High Power RF GaN on SiC HEMT

400 W, 48 V, 3600 – 3800 MHz

Features

• GaN on SiC HEMT technology

• Input and output matched

• Asymmetrical Doherty design

- Main: P3dB = 230 W Typ

- Peak: P3dB = 360 W Typ

• Typical Pulsed CW performance, 3800 MHz, 48 V, combined outputs,

Doherty @ P3dB, 10 µs, 10% duty cycle

- Output power = 400 W

- Drain efficiency = 62%

- Gain = 12 dB

• Pb-free and RoHS compliant

Description

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobil-

ity transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermally-

enhanced package with earless flange.

Target RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

VDD = 48 V, IDQ = 250 mA, POUT = 63 W avg, VGSPEAK = –6 V, ƒ = 3800 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%

CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

13.7

—

dB

Drain Efficiency

hD

—

44

—

%

Adjacent Channel Power Ratio

ACPR

—

–31

—

dBc

Output PAR @ 0.01% CCDF

OPAR

—

7.5

—

dB

Advance GTRA384802FC

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Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	GTRA384802FC-V1-R2	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27

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GTRA384802FC-V1-R2 Datasheet(PDF) 1 Page - Cree, Inc

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