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GTVA262701FA-V2-R0 Datasheet(PDF) 7 Page - Cree, Inc

Part # GTVA262701FA-V2-R0
Description  Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
PDF  8 Pages
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

GTVA262701FA-V2-R0 Datasheet(HTML) 7 Page - Cree, Inc

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
7
GTVA262701FA
Package Outline Specifications
Package H-87265J-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.13 ± 0.05 mm [.005 ± .002 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
CL
L
C
D
G
6.35
[.250]
LID
10.16±.25
[.400±.010]
45° X .64
[.025]
2.59±.51
[.102±.020]
10.16±.25
[.400±.010]
SPH 1.57
[.062]
1.02
[.040]
S
(15.34
[.604])
3.63±.38
[.143±.015]
H-87265J-2_po-03_03-03-2017-bn
FLANGE
R0.63
[R.025] MAX
FLANGE
10.16 ± 0.191
[.400 ± .0075]
10.16 ± 0.191
[.400 ± .0075]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm; alternate dimensions are inches
3. All tolerances ± 0.127 [.005]
4. Pins: D – drain; G – gate; S – source
5. Lead thickness: 0.13 ± 0.05 mm [.005 ± .002 inch]
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]



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