IRL640

HEXFET Power Mosfet

www.artschip.com

2

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Drain-to-Source Breakdown Voltage

200

-

-

V

Breakdown Voltage Temp. Coefficient

-

0.27

-

V/℃

-

-

0.18

Static Drain-to-Source On-Resistance

-

-

0.27

Ω

Gate Threshold Voltage

1.0

-

-

V

gts

Forward Transconductance

16

-

-

S

-

-

25

Drain-to-Source Leakage Current

-

-

250

µA

Gate-to-Source Forward Leakage

-

-

100

Gate-to-Source Reverse Leakage

-

-

-100

nA

Qg

Total Gate Charge

-

-

66

Qgs

Gate-to-Source Charge

-

-

9.0

Qgd

Gate-to-Drain (“Miller”) Charge

-

-

38

nC

td(on)

Turn-On Delay Time

-

8.0

-

tr

Rise Time

-

83

-

td(off)

Turn-Off Delay Time

-

44

-

tf

Fall Time

-

52

-

nS

Internal Drain Inductance

-

4.5

-

Ls

Internal Source Inductance

-

7.5

-

nH

Between

lead,

6mm

(0.25in.)

from

package

and center of

die contact

Ciss

Input Capacitance

-

1800

-

Coss

Output Capacitance

-

400

-

Crss

Reverse Transfer Capacitance

-

120

-

pF

f=1.0MHz See Figure 5

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Is

Continuous Source Current

(Body Diode)

-

-

17

Pulsed Source Current

(Body Diode) ①

-

-

68

A

MOSFET

symbol showing

the

integral

reverse

p-n

junction diode.

Diode Forward Voltage

-

-

2.0

V

trr

Reverse Recovery Time

-

310

470

ns

Qrr

Reverse Recovery Charge

-

3.2

3.2

µC

TJ=25℃, IF=17A

di/dt=100A/µs ④

ton

Forward Turn-On Time

Notes:

①

Repetitive rating; pulse width limited by max. junction temperature (See Figure 11)

②

③

④

Pulse width≤300µs; duty cycle≤2%.